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Datasheet TSA6060 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | TSA6060 | Fast radio tuning PLL frequency synthesizer
INTEGRATED CIRCUITS
DATA SHEET
TSA6060 Fast radio tuning PLL frequency synthesizer
Product specification Supersedes data of April 1994 File under Integrated Circuits, IC01 1995 Nov 23
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Philips Semiconductors
P | NXP Semiconductors | data |
TSA Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | TSA1001 | A/D CONVERTER
TSA1001
10-BIT, 25MSPS, 35mW A/D CONVERTER
s 10-bit A/D converter in deep submicron s s s s s s s s
CMOS technology Ultra low power consumption: 35mW @ 25Msps (10mW @ 5Msps) Single supply voltage: 2.5V Input range: 2Vpp differential 25Msps sampling frequency ENOB=9.7 @ Nyquist S ST Microelectronics converter | | |
2 | TSA1002 | 50mW A/D CONVERTER
10-BIT, 50MSPS, 50mW A/D CONVERTER
NOT FOR NEW DESIGN
P P P P P P P P P
DESCRIPTION
N
10-bit A/D converter in deep submicron CMOS technology Single supply voltage: 2.5V Input range: 2Vpp differential 50Msps sampling frequency Ultra low power consumption: 50mW @ 50Msps ENOB=9 STMicroelectronics converter | | |
3 | TSA1005 | A/D CONVERTER
TSA1005
DUAL-CHANNEL, 10-BIT, 20/40MSPS A/D CONVERTER
s 10-bit, dual-channel A/D converter in deep s s s s s s
submicron CMOS technology, 20/40Msps Single supply voltage: 2.5V Independent supply for CMOS output stage with 2.5V/3.3V capability ENOB=9.5 @ 20Msps, ENOB=9.2 @ 40Msps ST Microelectronics converter | | |
4 | TSA1015 | PNP SILICON TRANSISTOR
TSA1015
PNP SILICON TRANSISTOR
TP transistor | | |
5 | TSA1036 | General Purpose PNP Transistor
TSA1036
General Purpose PNP Transistor
Pin assignment: 1. Base 2. Emitter 3. Collector
BVCEO = - 32V Ic = - 600mA VCE (SAT), = 0.2V(typ.) @Ic / Ib = 300mA / 30mA
Features
Driver stage of AF amplifier. General purpose switching application
Ordering Information
Part No. TSA1036 TSC transistor | | |
6 | TSA1036D | General Purpose Dual PNP Transistor
TSA1036D
General Purpose Dual PNP Transistor
Pin assignment: 6. Collector 1 1. Emitter 1 5. Base 2 2. Base 1 4. Emitter 2 3. Collector 2
BVCEO = - 32V Ic = - 500mA VCE (SAT), = 0.4V(typ.) @Ic / Ib = 300mA / 30mA
Features
Two TSA1036 chips in a STO-363 package Transistor elemen TSC transistor | | |
7 | TSA10N80M | N-Channel MOSFET TSA10N80M
800V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse Truesemi mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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