UAA3587 PDF Datasheet

UAA3587 RF SiP Integrating passive and active components into a single package, this complete RF transceiver improves performance while eliminating 35 external components and enabling an RF front-end of less than 2.5 cm2. Complete, single-package GSM/GPRS/EDGE RF transceiver Semiconductors The UAA3587, the first Philips System-in-Package (SiP) solution to use a new silicon-ba

DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide

2SK3587-01MR FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible

DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain charac

EM358x High-Performance, Integrated ZigBee/802.15.4 System-on-Chip Family Complete System-on-Chip - 32-bit ARM® Cortex -M3 processor - 2.4 GHz IEEE 802.15.4-2003 transceiver & lower MAC - 256 or 512 kB flash, with optional read protection - 32 or 64 kB RAM memory - AES128 encry