|
|
Datasheet V8PAL50 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | V8PAL50 | Surface Mount Trench MOS Barrier Schottky Rectifier www.vishay.com
V8PAL50
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS® SMPATM
Top View
Bottom View
DO-221BC (SMPA)
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 8.0 A (TA = 125 °C) TJ max. Package
8.0 A 50 V 120 A 0.40 V 150 °C DO-221BC (SMPA) | Vishay | rectifier |
2 | V8PAL50-M3 | Surface Mount Trench MOS Barrier Schottky Rectifier www.vishay.com
V8PAL50-M3
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS® SMPATM
Top View
Bottom View
DO-221BC (SMPA)
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 8.0 A (TA = 125 °C) TJ max. Package
8.0 A 50 V 120 A 0.40 V 150 °C DO-221BC (SM | Vishay | rectifier |
V8P Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | V8P10 | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier New Product
V8P10
Vishay General Semiconductor
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.466 V at IF = 4 A
TMBS® eSMP® Series
FEATURES • Very low profile - typical height of 1.1 mm
• Ideal for automated placement K • Trench MOS Schottky t Vishay rectifier | | |
2 | V8P12 | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier www.vishay.com
V8P12
Vishay General Semiconductor
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.53 V at IF = 4 A
TMBS® eSMP® Series
K
1 2
TO-277A (SMPC)
K Cathode
Anode 1 Anode 2
FEATURES
• Very low profile - typical height of 1.1 mm
Availabl Vishay rectifier | | |
3 | V8P15 | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier www.vishay.com
V8P15
Vishay General Semiconductor
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 4 A
TMBS® eSMP® Series
K
1 2
TO-277A (SMPC)
K Cathode
Anode 1 Anode 2
FEATURES
• Very low profile - typical height of 1.1 mm
Availabl Vishay rectifier | | |
4 | V8PAL45 | Surface Mount Trench MOS Barrier Schottky Rectifier www.vishay.com
V8PAL45
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS® SMPATM
Top View
Bottom View
DO-221BC (SMPA)
FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low pow Vishay rectifier | | |
5 | V8PAL50 | Surface Mount Trench MOS Barrier Schottky Rectifier www.vishay.com
V8PAL50
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS® SMPATM
Top View
Bottom View
DO-221BC (SMPA)
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 8.0 A (TA = 125 °C) TJ max. Package
8.0 A 50 V 120 A 0.40 V 150 °C DO-221BC (SMPA) Vishay rectifier | | |
6 | V8PAL50-M3 | Surface Mount Trench MOS Barrier Schottky Rectifier www.vishay.com
V8PAL50-M3
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS® SMPATM
Top View
Bottom View
DO-221BC (SMPA)
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 8.0 A (TA = 125 °C) TJ max. Package
8.0 A 50 V 120 A 0.40 V 150 °C DO-221BC (SM Vishay rectifier | | |
7 | V8PAN50-M3 | Surface Mount Trench MOS Barrier Schottky Rectifier www.vishay.com
V8PAN50-M3
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS® SMPATM
Top View
Bottom View
DO-221BC (SMPA)
PRIMARY CHARACTERISTICS
IF(AV)
8.0 A
VRRM IFSM VF at IF = 8.0 A (TA = 125 °C)
50 V 120 A 0.41 V
TJ max.
150 °C
Package
DO-221 Vishay rectifier | |
Esta página es del resultado de búsqueda del V8PAL50. Si pulsa el resultado de búsqueda de V8PAL50 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |