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Datasheet VBT6045C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | VBT6045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier New Product
VBT6045C
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.33 V at IF = 10 A
TMBS ®
TO-263AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level |
 Vishay Siliconix |
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| 4 | VBT6045C-E3 | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VBT6045C-E3
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.33 V at IF = 10 A
TMBS ®
TO-263AB
K
2 1
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Me |
 Vishay |
|
| 3 | VBT6045C-M3 | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VBT6045C-M3
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.33 V at IF = 10 A
TMBS ®
TO-263AB
K
2 1
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Me |
Vishay |
|
| 2 | VBT6045CBP | Trench MOS Barrier Schottky Rectifier Rectifier www.DataSheet.co.kr
New Product
VBT6045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.33 V at IF = 10 A
TMBS ®
TO-263AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • Hig |
Vishay |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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