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Datasheet VQ1006 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | VQ1006 | N-Channel Enhancement-Mode MOS Transistor 1 Pulse width limited by junction temp. 2 Design only - not subject to production
Unless requested 3 pulse test: 300uSec, duty cycle less than
or equal to 2%
D Package 14-Lead Side Brazed (Hermetic)
.005 (0.127)
MIN
.760 (19.304)
TYP.
14 13 12 11 10
9
8
PIN NO. 1 IDENT
.290 (7.366)
TYP
123456 | American Microsemiconductor | transistor |
2 | VQ1006J | N-Channel Enhancement-Mode MOS Transistor 1 Pulse width limited by junction temp. 2 Design only - not subject to production
Unless requested 3 pulse test: 300uSec, duty cycle less than
or equal to 2%
D Package 14-Lead Side Brazed (Hermetic)
.005 (0.127)
MIN
.760 (19.304)
TYP.
14 13 12 11 10
9
8
PIN NO. 1 IDENT
.290 (7.366)
TYP
123456 | American Microsemiconductor | transistor |
3 | VQ1006P | N-Channel Enhancement-Mode MOS Transistor 1 Pulse width limited by junction temp. 2 Design only - not subject to production
Unless requested 3 pulse test: 300uSec, duty cycle less than
or equal to 2%
D Package 14-Lead Side Brazed (Hermetic)
.005 (0.127)
MIN
.760 (19.304)
TYP.
14 13 12 11 10
9
8
PIN NO. 1 IDENT
.290 (7.366)
TYP
123456 | American Microsemiconductor | transistor |
4 | VQ1006P | N-Channel 80- and 90-V (D-S) MOSFETs VN0808L/LS, VQ1006P
Vishay Siliconix
N-Channel 80- and 90-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VN0808L VN0808LS VQ1006P 80 90
V(BR)DSS Min (V)
rDS(on) Max (W)
4 @ VGS = 10 V 4 @ VGS = 10 V 4 @ VGS = 10 V
VGS(th) (V)
0.8 to 2 0.8 to 2 0.8 to 2.5
ID (A)
0.3 0.33 0.4
FEATURES
D D D D D Low | Vishay Siliconix | mosfet |
VQ1 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | VQ1000J | N-Channel 60-V (D-S) MOSFET 2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
2N7000 2N7002 VQ1000J VQ1000P BS170 60
V(BR)DSS Min (V)
rDS(on) Max (W)
5 @ VGS = 10 V 7.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5 @ VGS = 10 V
VGS(th) (V)
0.8 to 3 1 to 2.5 0.8 to Vishay Siliconix mosfet | | |
2 | VQ1000P | N-Channel 60-V (D-S) MOSFET 2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
2N7000 2N7002 VQ1000J VQ1000P BS170 60
V(BR)DSS Min (V)
rDS(on) Max (W)
5 @ VGS = 10 V 7.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5 @ VGS = 10 V
VGS(th) (V)
0.8 to 3 1 to 2.5 0.8 to Vishay Siliconix mosfet | | |
3 | VQ1001J | Quad N-Channel 30-V (D-S) MOSFETs VQ1001J/P
Vishay Siliconix
Quad N-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VQ1001J VQ1001P
V(BR)DSS Min (V)
30
rDS(on) Max (W)
1 @ VGS = 12 V 1 @ VGS = 12 V
VGS(th) (V)
0.8 to 2.5 0.8 to 2.5
ID (A)
0.83 0.53
FEATURES
D D D D D Low On-Resistance: 0.85 W Low Threshold: 1.4 V Low In Vishay Siliconix mosfet | | |
4 | VQ1001P | Quad N-Channel 30-V (D-S) MOSFETs VQ1001J/P
Vishay Siliconix
Quad N-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VQ1001J VQ1001P
V(BR)DSS Min (V)
30
rDS(on) Max (W)
1 @ VGS = 12 V 1 @ VGS = 12 V
VGS(th) (V)
0.8 to 2.5 0.8 to 2.5
ID (A)
0.83 0.53
FEATURES
D D D D D Low On-Resistance: 0.85 W Low Threshold: 1.4 V Low In Vishay Siliconix mosfet | | |
5 | VQ1004J | N-Channel 60-V (D-S) Single and Quad MOSFETs 2N6660, VQ1004J/P
Vishay Siliconix
N-Channel 60-V (D-S) Single and Quad MOSFETs
PRODUCT SUMMARY
Part Number
2N6660 VQ1004J/P
V(BR)DSS Min (V)
60
rDS(on) Max (W)
3 @ VGS = 10 V 3.5 @ VGS = 10 V
VGS(th) (V)
0.8 to 2 0.8 to 2.5
ID (A)
1.1 0.46
FEATURES
D D D D D Low On-Resistance: 1.3 W Low Thre Vishay Siliconix mosfet | | |
6 | VQ1004P | N-Channel 60-V (D-S) Single and Quad MOSFETs 2N6660, VQ1004J/P
Vishay Siliconix
N-Channel 60-V (D-S) Single and Quad MOSFETs
PRODUCT SUMMARY
Part Number
2N6660 VQ1004J/P
V(BR)DSS Min (V)
60
rDS(on) Max (W)
3 @ VGS = 10 V 3.5 @ VGS = 10 V
VGS(th) (V)
0.8 to 2 0.8 to 2.5
ID (A)
1.1 0.46
FEATURES
D D D D D Low On-Resistance: 1.3 W Low Thre Vishay Siliconix mosfet | | |
7 | VQ1006 | N-Channel Enhancement-Mode MOS Transistor 1 Pulse width limited by junction temp. 2 Design only - not subject to production
Unless requested 3 pulse test: 300uSec, duty cycle less than
or equal to 2%
D Package 14-Lead Side Brazed (Hermetic)
.005 (0.127)
MIN
.760 (19.304)
TYP.
14 13 12 11 10
9
8
PIN NO. 1 IDENT
.290 (7.366)
TYP
123456 American Microsemiconductor transistor | |
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Número de pieza | Descripción | Fabricantes | |
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