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Datasheet VSSB410S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | VSSB410S | Surface Mount Trench MOS Barrier Schottky Rectifier www.DataSheet.co.kr
New Product
VSSB410S
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package
TMBS
®
• Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage |  Vishay | rectifier |
| 2 | VSSB410S-M3 | Surface Mount Trench MOS Barrier Schottky Rectifier www.vishay.com
VSSB410S-M3
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS®
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM EAS VF at IF = 4.0 A TJ max. Package
4.0 A 100 V 80 A 50 mJ 0.61 V 150 °C DO-214AA (SMB)
Diode variation
Single die
FE | Vishay | rectifier |
VSS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | VSSA210 | Surface Mount Trench MOS Barrier Schottky Rectifier VSSA210
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • N  Taychipst rectifier | | |
| 2 | VSSA210 | Surface Mount Trench MOS Barrier Schottky Rectifier New Product
VSSA210
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
TMBS®
• Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1 Vishay rectifier | | |
| 3 | VSSA310 | Surface Mount Trench MOS Barrier Schottky Rectifier VSSA310
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • N Taychipst rectifier | | |
| 4 | VSSA310S | Surface Mount Trench MOS Barrier Schottky Rectifier VSSA310S
www.vishay.com
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package
TMBS
®
• Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL Vishay rectifier | | |
| 5 | VSSA36S | Surface Mount Trench MOS Barrier Schottky Rectifier New Product
VSSA36S
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
TMBS®
• Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1 Vishay rectifier | | |
| 6 | VSSA3L6S | Surface Mount Trench MOS Barrier Schottky Rectifier VSSA3L6S
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Taychipst rectifier | | |
| 7 | VSSA3L6S | Surface Mount Trench MOS Barrier Schottky Rectifier New Product
VSSA3L6S
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
TMBS®
• Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level Vishay rectifier | |
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