|
|
Datasheet WFF12N65L Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | WFF12N65L | Silicon N-Channel MOSFET WFF12N65L Product Description
Silicon N-Channel MOSFET
Features
� 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 40nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction Temperature Range(150℃)
General Description
This P | Winsemi | mosfet |
WFF Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | WFF | Fast Fusible Metal Film Resistors Fast Fusible Metal Film Resistors
WFF Series
Welwyn Components
• • •
Low power fusing Predictable fusing characteristics Flameproof protection
Electrical Data
WFF1/4 Power rating at 70˚ C Resistance range Limiting element voltage TCR Resistance tolerance Standard valu Welwyn Components Limited data | | |
2 | WFF10N60 | N-Channel MOSFET HIGH VOLTAGE N-Channel MOSFET
WFF10N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 33nC (Typ.) □ BVDSS=600V,ID=10A □ RDS(on) :0.73 Ω (Max) @VG=10V □ 100% Wisdom technologies mosfet | | |
3 | WFF10N60 | Silicon N-Channel MOSFET www.DataSheet.in
WFF10N60
Silicon N-Channel MOSFET
Features
� � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability
General Description
This Power MOS WINSEMI SEMICONDUCTOR mosfet | | |
4 | WFF10N65 | Silicon N-Channel MOSFET www.DataSheet.in
F10N6 5 WF WFF 10N65
Silicon N-Channel MOSFET
Features
� � � � � � 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability
General Description
This WINSEMI SEMICONDUCTOR mosfet | | |
5 | WFF10N65L | Silicon N-Channel MOSFET WFF10N65L Product Description
Silicon N-Channel MOSFET
Features
� 10A,650V,RDS(on)(Max1.0Ω)@VGS=10V � Ultra-low Gate charge(Typical 32nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction Temperature Range(150℃)
General Description
This P Winsemi mosfet | | |
6 | WFF1101 | (WFF1xx1) GB Directions for Use w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a t a
e h S
4 t e
U
m o .c
BOSCH data | | |
7 | WFF1121 | (WFF1xx1) GB Directions for Use w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a t a
e h S
4 t e
U
m o .c
BOSCH data | |
Esta página es del resultado de búsqueda del WFF12N65L. Si pulsa el resultado de búsqueda de WFF12N65L se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |