Datasheet WFN1N60C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	WFN1N60C	Power MOSFET ( Transistor ) Features � 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFN1N60C Silicon N-Channel MOSFET General Description Th is Power MO SFET is produced using Winse mi’s	Winsemi

WFN1N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
WFN1N60C	Power MOSFET ( Transistor ) Features � 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFN1N60C Silicon N-Channel MOSFET General Description Th is Power MO SFET is produce	Winsemi
WFN1N60	Silicon N-Channel MOSFET Datasheet pdf - http://www.DataSheet4U.net/ Datasheet.es WFN1N60 Silicon N-Channel MOSFET Features � � � � � 1.3A,600V, RDS(on)(Max8.5Ω)@VGS=10V Ultra-low Gate charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature R	Winsemi
WFN1N70	N-Channel MOSFET PRELIMILARY Wisdom Semiconductor WFN1N70 N-Channel MOSFET Features ■ RDS(on) (Max 14.0 Ω )@VGS=10V ■ Gate Charge (Typical 5.0nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description T	Wisdom technologies

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Número de pieza	Descripción	Fabricantes	PDF
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