Datasheet WFN1N60NC Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	WFN1N60NC	Silicon N-Channel MOSFET WFN1N60NC Silicon N-Channel MOSFET Features ■0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s adv	Winsemi

WFN1N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
WFN1N60C	Power MOSFET ( Transistor ) Features � 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFN1N60C Silicon N-Channel MOSFET General Description Th is Power MO SFET is produce	Winsemi
WFN1N60	Silicon N-Channel MOSFET Datasheet pdf - http://www.DataSheet4U.net/ Datasheet.es WFN1N60 Silicon N-Channel MOSFET Features � � � � � 1.3A,600V, RDS(on)(Max8.5Ω)@VGS=10V Ultra-low Gate charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature R	Winsemi
WFN1N60	N-Channel MOSFET HIGH VOLTAGE N-Channel MOSFET WFN1 N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 10nC (Typ.) □ BVDSS=600V,ID=1A □ RDS(on) : 8 Ω (Max)	Wisdom technologies

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Número de pieza	Descripción	Fabricantes	PDF
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