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Datasheet WFN1N70 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | WFN1N70 | N-Channel MOSFET PRELIMILARY
Wisdom Semiconductor
WFN1N70
N-Channel MOSFET
Features
■ RDS(on) (Max 14.0 Ω )@VGS=10V ■ Gate Charge (Typical 5.0nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is |  Wisdom technologies | mosfet |
WFN Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | WFN1N60 | N-Channel MOSFET HIGH VOLTAGE N-Channel MOSFET
WFN1 N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 10nC (Typ.) □ BVDSS=600V,ID=1A □ RDS(on) : 8 Ω (Max) @VG=10V □ 100% Ava Wisdom technologies mosfet | | |
| 2 | WFN1N60 | Silicon N-Channel MOSFET Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
WFN1N60
Silicon N-Channel MOSFET
Features
� � � � � 1.3A,600V, RDS(on)(Max8.5Ω)@VGS=10V Ultra-low Gate charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
Genera  Winsemi mosfet | | |
| 3 | WFN1N60C | Power MOSFET, Transistor Features
� 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
WFN1N60C
Silicon N-Channel MOSFET
General Description
Th is Power MO SFET is produced using Winse mi’s Winsemi mosfet | | |
| 4 | WFN1N60N | Silicon N-Channel MOSFET Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
N1N6 0N WF WFN 1N60
Silicon N-Ch annel MOS FET Cha OSF
Features
■0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature R Winsemi mosfet | | |
| 5 | WFN1N60NC | Silicon N-Channel MOSFET WFN1N60NC
Silicon N-Channel MOSFET
Features
■0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s adv Winsemi mosfet | | |
| 6 | WFN1N70 | N-Channel MOSFET PRELIMILARY
Wisdom Semiconductor
WFN1N70
N-Channel MOSFET
Features
■ RDS(on) (Max 14.0 Ω )@VGS=10V ■ Gate Charge (Typical 5.0nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is Wisdom technologies mosfet | |
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