| No | Part number | Description ( Function ) | Manufacturers | |
| 2 | WFP50N06 | Silicon N-Channel MOSFET Features ■ RDS(on)(Max 22mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 31nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) WFP50N06 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's trench Layout -based process .This technology mproves the performances Compared with standard p |
 Winsemi |
|
| 1 | WFP50N06 | N-Channel MOSFET Wisdom Semiconductor WFP50N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.022 Ω )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175°C) Symbol ◀ { 2. Drain ● 1. Gate { ▲ ● ● { 3. Source General Description This Power MOSFET is p |
 Wisdom technologies |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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