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Datasheet WFP8N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | WFP8N60 | N-Channel MOSFET HIGH VOLTAGE N-Channel MOSFET
WFP8 N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 40nC (Typ.) □ BVDSS=600V,ID=7.5A □ RDS(on) :1.32 Ω (Max) @VG=10V □ 100% |
 Wisdom technologies |
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| 2 | WFP8N60 | Silicon N-Channel MOSFET www.DataSheet.in
WFP8N60
Silicon N-Channel MOSFET
Features
� � � � � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using |
 WINSEMI SEMICONDUCTOR |
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| 1 | WFP8N60B | Silicon N-Channel MOSFET WFP8N60B Product Description
Silicon N-Channel MOSFET
Features
� 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃)
General Descrip |
 Winsemi |
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