Datasheet WNM01N11 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	WNM01N11	MOSFET ( Transistor ) WNM01N11 Single N-Channel, 110V, 1.8A, Power MOSFET VDS (V) 110 Typical Rds(on) (Ω) 0.230@ VGS=10V 0.250@ VGS=4.5V WNM01N11 Http://www.sh-willsemi.com Descriptions The WNM01N11 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellen	WillSEMI

WNM01 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
WNM01N10	MOSFET ( Transistor ) WNM01N10 Single N-Channel, 100V, 1.7A, Power MOSFET VDS (V) 100 Typical Rds(on) (Ω) 0.235@ VGS=10V 0.255@ VGS=4.5V Descriptions The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with l	WillSEMI
WNM01N11	MOSFET ( Transistor ) WNM01N11 Single N-Channel, 110V, 1.8A, Power MOSFET VDS (V) 110 Typical Rds(on) (Ω) 0.230@ VGS=10V 0.250@ VGS=4.5V WNM01N11 Http://www.sh-willsemi.com Descriptions The WNM01N11 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design	WillSEMI

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Número de pieza	Descripción	Fabricantes	PDF
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