| No | Part number | Description ( Function ) | Manufacturers | |
| 2 | WNM2016 | N-Channel MOSFET WNM2016 N-Channel, 20V, 3.2A, Power MOSFET WNM2016 Http://www.willsemi.com V(BR)DSS 20 Rds(on) 40 @ 4.5V 47 @ 2.5V 55 @ 1.8V Descriptions The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applicat |
 Will Semiconductor |
|
| 1 | WNM2016 | N-Channel Power MOSFET / Transistor Product specification WNM2016 N-Channel, 20V, 3.2A, Power MOSFET V(BR)DSS Rds(on) 40 @ 4.5V 20 47 @ 2.5V 55 @ 1.8V SOT-23 Descriptions The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D 3 with low gate 1 G 2 S charge. This device is suitable for use in DC-DC conversion and power s |
 TY Semiconductor |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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