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Datasheet WPM2009D Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 WPM2009D   P-MOSFET

WPM2009D -20V, -4A, 42mŸ, 2.0W, DFN3x3, P-MOSFET Descriptions This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D is enhancement power MOSFET with 2.0W power dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited
 WillSEMI
WillSEMI		 datasheet WPM2009D pdf

WPM20 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
WPM2015

P-Channel MOSFET

SMD Type MOSFET P-Channel MOSFET WPM2015 (KPM2015) ■ Features ● VDS (V) =-20V ● ID =-2.4 A ● RDS(ON) ＜ 110mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) ● Supper high density cell design +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1
Kexin
Kexin		 datasheet pdf - Kexin
WPM2087

MOSFET ( Transistor )

WPM2087 Single P-Channel, -20V, -4.3A, Power MOSFET WPM2087 Http://www.sh-willsemi.com VDS (V) -20 Typical RDS(on) (mΩ) 34@ VGS=-4.5V 39 @ VGS=-3.1V 45 @ VGS=-2.5V Descriptions The WPM2087 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology
WillSEMI
WillSEMI		 datasheet pdf - WillSEMI
WPM2031

Single P-Channel Power MOSFET

WPM2031 WPM2031 Single P-Channel, -20V, -0.65A, Power MOSFET Http://www.sh-willsemi.com VDS (V) -20 Rds(on) (Ω) 0.495@ VGS=–4.5V 0.665@ VGS=–2.5V 0.882@ VGS=–1.8V ESD Protected Descriptions The WPM2031 is P-Channel enhancement MOS Field Effect Transistor. Uses adva
 WillSEMI
WillSEMI		 datasheet pdf - WillSEMI


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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