Datasheet WTC2312 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	WTC2312	N-Channel Enhancement Mode Power MOSFET WTC2312 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<41mΩ @VGS=4.5V RDS(ON)<47mΩ @VGS=2.5V RDS(ON)<57mΩ @VGS=1.8V * Capable of 2.5V gate drive *	Weitron Technology

WTC2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
WTC2305	P-Channel Enhancement Mode Power MOSFET WTC2305 P-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE Features: Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V Rugged and Reliable Simple Drive Requirement SOT-23 Package SOURC	Weitron Technology
WTC2306A	Enhancement Mode Power MOSFET WTC2306A N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE Features: SOURCE 2 3 1 2 Super High Dense Cell Design For Low R DS(ON) R DS(ON) <30mΩ@V GS =10V Rugged and Reliable *Simple Drive	Weitron Technology
WTC2305A	Enhancement Mode Power MOSFET WTC2305A P-Channel Enhancement Mode Power MOSFET 1 GATE SOURCE 3 DRAIN DRAIN CURRENT -3.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 2 Features: Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@V GS =-10V Rugged and Reliable *Capable of 2.5	Weitron Technology

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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