Datasheet VHB2512F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	VHB2512F	NPN SILICON RF POWER TRANSISTOR VHB25-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-12F is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A Ø.125 NOM. FULL R J .125 FEATURES: • Common Emitter • PG = 10 dB at 25 W/175 MHz • Omnigold™ Metalizati	Advanced Semiconductor

VHB25 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
VHB25-28F	NPN SILICON RF POWER TRANSISTOR VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is Designed for PACKAGE STYLE .380 4L FLG .112 x 45° A Ø.125 NOM. FULL R J .125 FEATURES: • • • Omnigold™ Metalization System B C D MAXIMUM RATINGS IC VCBO VEBO VCEO PDISS TJ TSTG θ JC O F	Advanced Semiconductor
VHB2512f	NPN SILICON RF POWER TRANSISTOR VHB25-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-12F is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A Ø.125 NOM. FULL R J .125 FEATURES: • Common Emitter • PG = 10 dB at 25 W/175 MHz • Om	Advanced Semiconductor
VHB25-28S	NPN SILICON RF POWER TRANSISTOR VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28S is Designed for PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: • • • Omnigold™ Metalization System B ØC D H I J MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 4.0 A 65 V 35 V 4.0 V	Advanced Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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